Microstructures after Processing by Aging and ECAP
for Al-Mg2Si Alloys Containing Excess Si or Mg
 
Kazuko Fujita*, Takeshi Fujita*, Keiichiro Oh-ishi*, Kenji Kaneko*,
Zenji Horita*and TerenceG. Langdon**
* Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
** Departments of Aerospace and Mechanical Engineering and Materials Science,
University of Southern California
 

In this study, severe plastic straining through equal-channel angular pressing (ECAP) is imposed on age-hardenable Al-Mg-Si alloys having two different compositions of excess Si or Mg in the Al-Mg2Si pusedo-binary system. Thereafter, the alloys are subjected to aging and the microstructures are examined using transmission electron microscopy. It is shown that the precipitation behavior is significantly changed through application of ECAP. Figure 1 shows (a) a TEM bright field image and (b) a dark field image including (c) an SAED pattern of the sample containing excess Si after ECAP and annealing for 1 hour at 473 K. The dark field image was taken using a diffraction spot indicated by the arrow. Many rod-like precipitates are visible which are elongated along the <100>m direction of the matrix. A lattice image of a precipitate is shown in Fig.2 (a) and a diffractogram taken from the precipitate is in Fig.2(b). Close inspection of the image and diffractogram reveals that this particle is a type A precipitate. It was reported that the formation of type A precipitates occurred in a solution-treated sample after prolonged aging such as for 1000 hour at 473 K. Thus, the aging for 1 hour for the present ECAP sample is very short and it is considered that the aging was accelerated by severe plastic strain introduced by the ECAP process. This result is consistent with an earlier observation that precipitation process proceeds at a faster rate than that in the normal strain-free condition.

[Published in Materials Science Forum, 475-479, (2004), pp.4047-4050]


Fig. 1 (a) TEM bright field image and (b) dark field image including (c) SAED pattern of the sample containing excess Si after annealing for 1 hour at 473 K


Fig.2 (a) Lattice image of type A precipitate and (b) diffractogram taken from the precipitate